- parametric-filter Amplifiers
- parametric-filter Audio
- parametric-filter Battery management ICs
- parametric-filter
- parametric-filter DLP products
- parametric-filter Data converters
- parametric-filter
- parametric-filter Interface
- parametric-filter Isolation
- parametric-filter
- parametric-filter
- parametric-filter Motor drivers
- parametric-filter Power management
- parametric-filter
- parametric-filter Sensors
- parametric-filter
- parametric-filter Wireless connectivity
- parametric-filter
- parametric-filter
- parametric-filter DC/DC power modules
- parametric-filter DDR memory power ICs
- parametric-filter Gate drivers
- parametric-filter
- parametric-filter LED drivers
- parametric-filter
- parametric-filter MOSFETs
- parametric-filter Multi-channel ICs (PMICs)
- parametric-filter Power over Ethernet (PoE) ICs
- parametric-filter Power stages
- parametric-filter Power switches
- parametric-filter Power-supply filter ICs
- parametric-filter Sequencers
- parametric-filter
- parametric-filter
- parametric-filter Voltage references
- parametric-filter Half-bridge drivers
- parametric-filter Isolated gate drivers
- parametric-filter Low-side drivers
Home
Power management
Gate drivers
Isolated gate drivers
Automotive 5.7kVrms 2.5A/5A single-channel isolated gate driver w/split output & active protection
Data sheet
- document-pdfAcrobat ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet (Rev. A) PDF | HTML
A newer version of this product is available
Compare alternates
Same functionality with different pin-out to the compared device
ISO5852S-Q1
Product details
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Device HBM Classification Level 3A
- Device CDM Classification Level C6
- 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
- Split Outputs to Provide 2.5-A Peak Source and
5-A Peak Sink Currents - Short Propagation Delay: 76 ns (Typ),
110 ns (Max) - 2-A Active Miller Clamp
- Output Short-Circuit Clamp
- Soft Turn-Off (STO) during Short Circuit
- Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
- Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
- Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
- 2.25-V to 5.5-V Input Supply Voltage
- 15-V to 30-V Output Driver Supply Voltage
- CMOS Compatible Inputs
- Rejects Input Pulses and Noise Transients Shorter Than 20 ns
- Isolation Surge Withstand Voltage 12800-VPK
- Safety-Related Certifications:
- 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
- 5700-VRMS Isolation for 1 Minute per UL 1577
- CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
- TUV Certification per EN 61010-1 and EN 60950-1
- GB4943.1-2011 CQC Certification
- All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA
All trademarks are the property of their respective owners.
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Device HBM Classification Level 3A
- Device CDM Classification Level C6
- 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
- Split Outputs to Provide 2.5-A Peak Source and
5-A Peak Sink Currents - Short Propagation Delay: 76 ns (Typ),
110 ns (Max) - 2-A Active Miller Clamp
- Output Short-Circuit Clamp
- Soft Turn-Off (STO) during Short Circuit
- Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
- Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
- Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
- 2.25-V to 5.5-V Input Supply Voltage
- 15-V to 30-V Output Driver Supply Voltage
- CMOS Compatible Inputs
- Rejects Input Pulses and Noise Transients Shorter Than 20 ns
- Isolation Surge Withstand Voltage 12800-VPK
- Safety-Related Certifications:
- 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
- 5700-VRMS Isolation for 1 Minute per UL 1577
- CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
- TUV Certification per EN 61010-1 and EN 60950-1
- GB4943.1-2011 CQC Certification
- All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA
All trademarks are the property of their respective owners.
The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.
The ISO5852S-Q1 device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
For all available packages, see the orderable addendum at the end of the data sheet.The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.
The ISO5852S-Q1 device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
For all available packages, see the orderable addendum at the end of the data sheet.
filter Find other Isolated gate drivers
Technical documentation
No results found. Please clear your search and try again.
View all 14Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet (Rev. A) | PDF | HTML | 22 Dec 2016 |
Certificate | VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) | 29 Feb 2024 | ||
Certificate | ISO5x5x CQC Certificate of Product Certification | 07 Nov 2023 | ||
User guide | UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC | 01 Sep 2023 | ||
Certificate | ISO5451 CQC Certificate of Product Certification | 16 Aug 2023 | ||
Certificate | TUV Certificate for Isolation Devices (Rev. K) | 05 Aug 2022 | ||
Certificate | UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. P) | 05 Aug 2022 | ||
Application note | Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) | PDF | HTML | 17 Feb 2022 | |
Application brief | The Use and Benefits of Ferrite Beads in Gate Drive Circuits | PDF | HTML | 16 Dec 2021 | |
Certificate | CSA Certification (Rev. Q) | 14 Jun 2021 | ||
Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 Feb 2020 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 Feb 2020 | ||
Application note | Isolation Glossary (Rev. A) | 19 Sep 2017 | ||
EVM User's guide | ISO5852S Evaluation Module User's Guide (Rev. A) | 08 Sep 2015 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
Evaluation board
ISO5852SEVM — Reinforced Isolated IGBT Gate Driver Evaluation Module
This evaluation module, featuring ISO5852S reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.
User guide: PDF
Not available on TI.com
Simulation model
ISO5852S Unencrypted PSPICE Transient Model
SLLM446.ZIP (4 KB) - PSpice Model
Simulation tool
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs
TIDA-020014 — HEV/EV traction inverter power stage with 3 types of IGBT/SiC bias-supply solutions reference design
This reference design presents a traction inverter single-phase power stage with three 12-V car battery inputs, 4.2-W bias supply solutions for hybrid electric vehicle and electric vehicle (HEV/EV) systems. All bias-supply solutions accept a wide input range of 4.5 V to 42 V DC from a 12-V car (...)
Design guide: PDF
Schematic: PDF
Reference designs
TIDA-00794 — Thermal Protection Reference Design of IGBT Modules for HEV/EV Traction Inverters
The TIDA-00794 reference design is a temp sensing solution for IGBT thermal protection in HEV/EV traction inverter system. It monitors the IGBT temperature via the NTC thermistor integrated inside the IGBT module. It provides thermal shut down to the IGBT gate drivers once the NTC thermistor (...)
Design guide: PDF
Schematic: PDF
Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
SOIC (DW) | 16 | Ultra Librarian |
TI's Standard Terms and Conditions for Evaluation Items apply.
Ordering & quality
Add a quantity to your cart and begin the checkout process to view the options available to select lot or date codes from existing inventory.
Learn more
Information included:
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Information included:
- Fab location
- Assembly location
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.
Video series
View all videos